EI 6th sem VLSI Technology Syllabus EI 602 VLSI Technology Electronics and Instrumentation Syllabus

RGTU/RGPV EI-601 VLSI Technology Syllabus
Electronics and Instrumentation EI 6th Semester Syllabus

PROGRAMME: Electronics and Instrumentation Engineering
COURSE: EI602 VLSI Technology

Unit-I Crystal Growth and Wafer preparation: Wafer terminology, Different crystalline orientations, CZ method, CMOS IC Design flow, Crystal Defects. Fabrication processes of FETs, MOSFETs, and BIMOS etc.
Unit-II Layering: Epitaxial growth methods, Oxidation; Kinetics of oxidation, Thin film fabrication, Metallization; Physical Vapor Deposition, Sputtering.

Unit-III Patterning: Lithography; Optical Lithography, Electron Lithography, X-ray Lithography, Ion Lithography. Photo masking steps, Resists. Doping: Diffusion; Diffusion Models, Ion Implantation; Implantation Equipment, Channeling.

Unit-IV VLSI process techniques and Integration: Floor planning, layout, Design rules,   stick diagrams, Test generation, Logic simulation, Introduction to EDA tools. Contamination Control; Clean rooms, HEPA, ULPA Filters and Class numbers.

Unit-V Subsystem Design: Data-paths; adder, Shift registers ALU, Memory; NVRWM, Flash memories, 6-Transistor RAMs. Latch up in CMOS Circuits.

EI 602 VLSI Technology Text/ References:

1.  S.K.Gandhi, VLSI Fabrication principles, Wiley.
2.  S.M. Sze, VLSI Technology, II edition, McGraw Hill.
3.  P.Van Zant, Microchip Fabrication, A Practical Guide to Semiconductor Processing, Third Edition, McGraw Hill

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